KDS9952A features n-channel 3.7a, 30v, r ds(on) =0.08w @ v gs =10v. p-channel -2.9a, -30v, r ds(on) =0.13w @ v gs =-10v. high density cell design or extremely low r ds(on) . high power and current handling capability in a widely used surface mount package. dual (n & p-channel) mosfet in surface mount package. absolute maximum ratings ta = 25 parameter symbol n-channel p-channel unit draintosourcevoltage v dss 30 -30 v gate to source voltage v gs 20 20 v drain current continuous (note 1a) 3.7 2.9 a drain current pulsed 15 10 a power dissipation for dual operation p d power dissipation for single operation (note 1a) (note 1b) (note 1c) operating and storage temperature t j ,t stg thermal resistance junction to case (note 1) r jc /w thermalresistancejunctiontoambient (note1a) r ja /w i d p d 40 78 -55to150 w 2 1.6 1 0.9 smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification 4008-318-123 sales@twtysemi.com 1 of 3 http://www.twtysemi.com
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons type min typ max unit v gs =0v,i d = 250 a n-ch 30 v gs =0v,i d = -250 a p-ch -30 v ds =24v,v gs =0v 2 v ds =24v,v gs =0v,t j =55 25 v ds =-24v,v gs =0v -2 v ds =-24v,v gs =0v,t j =55 -25 gate-body leakage, forward i gssf v gs =20v,v ds = 0 v all 100 na gate-body leakage, reverse i gssr v gs =-20v,v ds = 0 v all -100 na v ds =v gs ,i d = 250 a 11.72.8 v ds =v gs ,i d = 250 a,t j = 125 0.7 1.2 2.2 v ds =v gs ,i d = -250 a -1 -1.6 -2.8 v ds =v gs ,i d = -250 a,t j = 125 -0.85 -1.25 -2.5 v gs =10v,i d = 1.0 a 0.06 0.08 v gs =10v,i d =1.0a,t j = 125 0.08 0.13 v gs =4.5v,i d = 0.5 a 0.08 0.11 v gs =4.5v,i d =0.5a,t j = 125 0.11 0.18 v gs =-10 v, i d =-1.0 a 0.11 0.13 v gs =-10 v, i d =-1.0 a,t j = 125 0.15 0.21 v gs =-4.5v,i d =- 0.5 a 0.17 0.2 v gs =-4.5v,i d =- 0.5 a,t j = 125 0.24 0.32 v gs =10v,v ds =5v n-ch 15 v gs =-10v,v ds =-5v p-ch -10 v ds =15v,i d =3.7a n-ch 6 v ds =-15v,i d =-2.9a p-ch 4 n-channel n-ch 320 v ds =10v,v gs = 0 v,f = 1.0 mhz p-ch 350 n-ch 225 p-channel p-ch 260 v ds =-10v,v gs = 0 v,f = 1.0 mhz n-ch 85 p-ch 100 n-channel n-ch 10 15 v dd =10v,i d =1a p-ch 9 40 v gs =10v,r gen =6 (note 2) n-ch 13 20 p-ch 21 40 p-channel n-ch 21 50 v dd =-10v,i d = -1 a p-ch 21 90 v gs =-10v,r gen =6 (note 2) n-ch 5 50 p-ch 8 50 n-channel n-ch 9.5 27 v ds =10v,i d =3.7a,v gs = 10 v p-ch 10 25 n-ch 1.5 p-channel p-ch 1.6 v ds =-10v,i d =-2.9a,v gs =-10v n-ch 3.3 p-ch 3.4 t d(on) turn-on delay time tr n-ch p-ch r ds(on) static drain-source on-resistance i d(on) on?state drain current drain?source breakdown voltage b vdss zero gate voltage drain current i dss c oss output capacitance c rss reverse transfer capacitance n-ch p-ch v gs(th) gate threshold voltage n-ch p-ch g fs forward transconductance c iss input capacitance turn-on rise time t d(off) turn-off delay time t f turn-off fall time q g total gate charge q gs gate?source charge q gd gate?drain charge v a v a s pf pf pf ns ns ns ns nc nc nc KDS9952A smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification 4008-318-123 sales@twtysemi.com 2 of 3 http://www.twtysemi.com
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons type min typ max unit n-ch 1.2 p-ch -1.2 v gs =0v,i s =1.25a (note2) n-ch 0.8 1.3 v gs =0v,i s =-1.25 a (note 2) p-ch -0.8 -1.3 v gs =0 v, i f =1.25 a,d if /d t =100a/ s n-ch 75 v gs =0 v, i f =-1.25 a,d if /d t =100a/ s p-ch 100 i s maximum continuous drain-source diode forward current v sd drain-source diode forward voltage trr reverse recovery time a v ns KDS9952A smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification 4008-318-123 sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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